Configuration of JI-LIGBT for Over 100 kHz Switching

@article{Terashima2007ConfigurationOJ,
  title={Configuration of JI-LIGBT for Over 100 kHz Switching},
  author={Tomohide Terashima and Junko Moritani},
  journal={Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's},
  year={2007},
  pages={225-228}
}
We have investigated into following measures to improve the switching performance of L-IGBT. 1. Passive PMOS. 2. N+ layer inside a p-type collector. 3. Wafer thinning. In particular, wafer thinning has brought remarkable improvement of switching performance on L-IGBT as the passive PMOS that we had proposed. Furthermore, we have fabricated a prototype IPD (intelligent power device) that we applied these measures, and a flyback converter controlled by the IPD has well demonstrated 150 kHz… CONTINUE READING