Conductivity-limiting bipolar thermal conductivity in semiconductors

@article{Wang2015ConductivitylimitingBT,
  title={Conductivity-limiting bipolar thermal conductivity in semiconductors},
  author={Shanyu Wang and Jiong Yang and Trevor Toll and Jihui Yang and Wenqing Zhang and Xinfeng Tang},
  journal={Scientific Reports},
  year={2015},
  volume={5}
}
Intriguing experimental results raised the question about the fundamental mechanisms governing the electron-hole coupling induced bipolar thermal conduction in semiconductors. [] Key Result Our combined theoretical analysis and experimental measurements show that in semiconductors bipolar thermal transport is in general a "conductivity-limiting" phenomenon, and it is thus controlled by the carrier mobility ratio and by the minority carrier partial electrical conductivity for the intrinsic and extrinsic cases…
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References

SHOWING 1-10 OF 109 REFERENCES
Enhancing the thermoelectric figure of merit through the reduction of bipolar thermal conductivity with heterostructure barriers
In this paper, we present theoretically that the thermoelectric figure of merit for a semiconductor material with a small band gap can be significantly enhanced near the intrinsic doping regime at
Anisotropic Multicenter Bonding and High Thermoelectric Performance in Electron-Poor CdSb
Long-standing challenges to simultaneously accomplish crystal-like electrical transport and glass-like thermal transport in materials hinder the development of thermoelectric energy conversion
Separation of the Electronic and Lattice Thermal Conductivities in Bismuth Crystals
The thermal conductivity of pure bismuth in a very high magnetic field has a contribution from the transverse thermomagnetic effects that is not negligible compared with the lattice contribution. It
Electronic band structure, magnetic, transport and thermodynamic properties of In-filled skutterudites InxCo4Sb12
The thermoelectric and thermodynamic properties of polycrystalline InxCo4Sb12 (0.0 ≤ x ≤ 0.26) skutterudites were investigated and analysed between 2 and 800 K by means of electrical resistivity,
CXXXV. Ambipolar thermodiffusion of electrons and holes in semiconductors
Summary The purpose of this paper is to bring to notice, and discuss the consequences of, the phenomenon of ambipolar diffusion of electrons and holes down a temperature gradient in a semiconductor.
The maximum possible conversion efficiency of silicon‐germanium thermoelectric generators
The thermoelectric properties of N‐type and P‐type Si‐Ge alloys have been reviewed and detailed calculations for the efficiency of a thermoelectric generator made from a 70% Si‐30% Ge alloy have been
Properties of single crystalline semiconducting CoSb3
A study of the thermoelectric properties of the skutterudite compound CoSb3 was carried out on single crystals grown by the Bridgman gradient freeze technique. p‐ and n‐type samples were obtained
Electronic structure of CoSb 3 : A narrow-band-gap semiconductor
We report calculations which show that the band structure of CoSb{sub 3} is typical of a narrow-band-gap semiconductor. The gap is strongly dependent on the relative position of the Sb atoms inside
Low thermal conductivity and high thermoelectric figure of merit in n-type BaxYbyCo4Sb12 double-filled skutterudites
Filled skutterudites are one of the most promising thermoelectric materials for power generation applications. The choice and concentration of filler atoms are key aspects for achieving high
...
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