Conductive structure for narrow connecting openings

@inproceedings{Edelstein2010ConductiveSF,
  title={Conductive structure for narrow connecting openings},
  author={Daniel C. Edelstein and Takeshi Nogami and Stephen M. Rossnagel and Chih-Chao Yang},
  year={2010}
}
There are provided a connecting structure, which has a reduced electrical resistance, and a method for forming such an interconnect structure. The connecting structure comprises a dielectric material (24) comprising at least one opening therein. The at least one opening is filled with an optional diffusion barrier layer (30), a grain growth-promoting layer (32), an agglomerated plating seed layer (34 '), optionally a second plating seed layer and a conductive pattern (38). The conductive… CONTINUE READING