Conductive Atomic Force Microscopy failure analysis for SOI devices

@article{SoonHuat2008ConductiveAF,
  title={Conductive Atomic Force Microscopy failure analysis for SOI devices},
  author={Lim Soon-Huat and Zheng Xinhua and T. Chea-Wei and Vinod Narang and T. Beng Hock and J. M. Chin},
  journal={2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits},
  year={2008},
  pages={1-4}
}
A FIB shorting technique to create a conducting path across the buried oxide to connect active silicon to silicon substrate is demonstrated to allow conductive atomic force microscopy (CAFM) failure analysis on SOI devices. CAFM is carried out at via and contact levels to provide current images that helped to localize the faulty node and also determine current-voltage characteristics at an area of interest. 

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