Conductive Atomic Force Microscope Study of Bipolar and Threshold Resistive Switching in 2D Hexagonal Boron Nitride Films

@inproceedings{Ranjan2018ConductiveAF,
  title={Conductive Atomic Force Microscope Study of Bipolar and Threshold Resistive Switching in 2D Hexagonal Boron Nitride Films},
  author={A. Ranjan and Niranjan Raghavan and Sean J. O'Shea and Shi-Gang Mei and Michel Bosman and Kalya Shubhakar and Kinleong Pey},
  booktitle={Scientific Reports},
  year={2018}
}
This study investigates the resistive switching characteristics and underlying mechanism in 2D layered hexagonal boron nitride (h-BN) dielectric films using conductive atomic force microscopy. A combination of bipolar and threshold resistive switching is observed consistently on multi-layer h-BN/Cu stacks in the low power regime with current compliance (Icomp) of less than 100 nA. Standard random telegraph noise signatures were observed in the low resistance state (LRS), similar to the trends… CONTINUE READING