Conduction mechanisms and low-frequency electrical noise studies in pin InGaAs/InAlAs strained MQW photodiodes

@article{Pires2005ConductionMA,
  title={Conduction mechanisms and low-frequency electrical noise studies in pin InGaAs/InAlAs strained MQW photodiodes},
  author={M. P. Pires and F. C. Guastavino and B. S. Yavich and P. L. Souza and A. E. Mwongbote and M. Valenza},
  journal={IEEE Transactions on Electron Devices},
  year={2005},
  volume={52},
  pages={1949-1953}
}
The current-voltage (I-V) characteristics as a function of temperature of different strained multiple-quantum-well pin InGaAs/InAlAs photodiodes were investigated in the dark from 15 K to 300 K. Analysis of the slope variation of the I-V curves as a function of temperature, under forward bias, indicate a conduction mechanism by tunneling effect assisted by… CONTINUE READING