Conductance suppression due to correlated electron transport in coupled double quantum dots

  title={Conductance suppression due to correlated electron transport in coupled double quantum dots},
  author={G{\'e}za T{\'o}th and Alexei O. Orlov and Islamshah Amlani and Craig S. Lent and Gary H. Bernstein and Gregory L. Snider},
  journal={Physical Review B},
The electrostatic interaction between two capacitively coupled metal double-dots is studied at low temperatures. Experiments show that when the Coulomb blockade is lifted by applying appropriate gate biases to both double-dots, the conductance through each double-dot becomes significantly lower than when only one doubledot is conducting. A master equation is derived for the system and the results obtained agree well with the experimental data. The model suggests that the conductance lowering in… 
10 Citations

Figures from this paper

Bidirectional Current Drag Induced by Two-Electron Cotunneling in Coupled Double Quantum Dots
We demonstrate a bidirectional current drag device, in which an electron tunneling through a double-quantum-dot (DQD) drags another electron in the other DQD in the same or opposite direction. The
Current suppression in a double-island single-electron transistor for detection of degenerate charge configurations of a floating double-dot
We have investigated a double-island single-electron transistor (DISET) coupled to a floating metal double-dot (DD). Low-temperature transport measurements were used to map out the charge
SU(4) Fermi liquid state and spin filtering in a double quantum dot system.
A symmetrical double quantum dot system with strong capacitive interdot coupling using renormalization group methods and in a four-lead setup the authors find perfectly spin-polarized transmission.
Single charge detection in capacitively coupled integrated single electron transistors based on single-walled carbon nanotubes
Single charge detection is demonstrated in the capacitively coupled integrated single electron transistors (SETs) in single-walled carbon nanotubes (SWCNTs) quantum dots. Two SETs are fabricated
Role of correlation in the operation of quantum-dot cellular automata
The intercellular Hartree approximation largely reduces the number of state variables and still gives good results especially when the system remains near ground state, suggesting that a large part of the correlation degrees of freedom are not essential from the point of view of the dynamics.
High-speed metallic quantum-dot cellular automata
  • Mo Liu, C. Lent
  • Physics
    2003 Third IEEE Conference on Nanotechnology, 2003. IEEE-NANO 2003.
  • 2003
The computation approach known as quantum-dot cellular automata (QCA) is based on encoding binary information in the charge configuration of quantum-dot cells. This paradigm provides a possible route
Charge shelving and bias spectroscopy for the readout of a charge qubit on the basis of superposition states
Charge-based qubits have been proposed as fundamental elements for quantum computers. One commonly proposed readout device is the single-electron transistor (SET). SETs can distinguish between
Proposed experiment to assess operation of quantum cellular automaton cells
We propose an experiment for the detection of quantum cellular automaton (QCA) operation in a cell made up of four silicon quantum dots. We show that correlated switching between the two pairs of
Quantum-dot cellular automata
  • G. Snider, A. Orlov, C. Lent
  • Physics
    Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004.
  • 2004
An introduction to of quantum-dot cellular automata (QCA) is presented, which offers the possibility of circuitry that dissipates many orders of magnitude less power than CMOS, is scalable to molecular dimensions, and provides the power gain necessary to restore signal levels.
The Development of Quantum-Dot Cellular Automata
A paradigm for connecting nanoscale bistable devices to accomplish general-purpose computation and its various implementations is examined.


Single Charge Tunneling: Coulomb Blockade Phenomena in Nanostructures
Introduction to Single Charge Tunneling M.H. Devoret, H. Grabert. Charge Tunneling Rates in Ultrasmall Junctions G.L. Ingold, Yu V. Nazarov. Transferring Electrons One by One D. Esteve. Josephson
A single-electron device and circuit simulator
We introduce a single-electron device and circuit simulator, called SIMON, with the following features. Tunnel junctions, capacitors, constant voltage sources, piecewise-linear time-dependent voltage
Transport in nanostructures
1. Introduction 2. Quantum confined systems 3. Transmission in nanostructures 4. Quantum dots and single electron phenomena 5. Interference in diffusive transport 6. Temperature decay of fluctuations
Quantum Transport and Dissipation
Theory of Coherent Transport. Quantization of Transport. Single-Electron Tunneling. Dissipative Quantum Systems. Driven Quantum Systems. Chaos, Coherence, and Dissipation. Indexes.
Nanotechnology is the set of technologies that enables the manipulation, study or exploitation of very small (typically less than 100 nanometres) structures and systems. To put this into perspective,
Europhys. Lett
  • Europhys. Lett
J. Appl. Phys
  • J. Appl. Phys
Appl. Phys. Lett
  • Appl. Phys. Lett
Phys. Rev. Lett. Phys. Rev. Lett
  • Phys. Rev. Lett. Phys. Rev. Lett
  • 1626
Superlattices Microstruct
  • Superlattices Microstruct