Computer Simulation of Crystal Growth and Dissolution in Metals and Semiconductors

@article{Clancy1991ComputerSO,
  title={Computer Simulation of Crystal Growth and Dissolution in Metals and Semiconductors},
  author={Paulette Clancy},
  journal={International Journal of High Performance Computing Applications},
  year={1991},
  volume={5},
  pages={10 - 33}
}
understanding of the underlying atomic-scale mechanisms responsible for a variety of phenomena concerned with materials processing (for a nontechnical introduction to the subject, see Phillpot, Yip, and Wolf, 1989). For example, atomic-scale simulations using both Monte Carlo and molecular dynamics techniques have been used to emulate processes such as crystal growth of semiconductors (Landman et al., 1988; Broughton and Abraham, 1986; Grabow, Gilmer, and Bakker, 1990), molecular beam epitaxy… CONTINUE READING

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