Computer Simulation of Crystal Growth and Dissolution in Metals and Semiconductors
@article{Clancy1991ComputerSO, title={Computer Simulation of Crystal Growth and Dissolution in Metals and Semiconductors}, author={Paulette Clancy}, journal={International Journal of High Performance Computing Applications}, year={1991}, volume={5}, pages={10 - 33} }
understanding of the underlying atomic-scale mechanisms responsible for a variety of phenomena concerned with materials processing (for a nontechnical introduction to the subject, see Phillpot, Yip, and Wolf, 1989). For example, atomic-scale simulations using both Monte Carlo and molecular dynamics techniques have been used to emulate processes such as crystal growth of semiconductors (Landman et al., 1988; Broughton and Abraham, 1986; Grabow, Gilmer, and Bakker, 1990), molecular beam epitaxy… CONTINUE READING