• DOI:10.1063/1.4821015
• Corpus ID: 15998841

Computational damage mechanics of electromigration and thermomigration

@article{Yao2013ComputationalDM,
  title={Computational damage mechanics of electromigration and thermomigration},
  author={Wei Yao and Cemal Basaran},
  journal={Journal of Applied Physics},
  year={2013},
  volume={114},
  pages={103708}
}

• W. Yao, C. Basaran
• Published 12 September 2013
• Engineering
• Journal of Applied Physics

Reliability of solder joints under Electromigration (EM) and Thermomigration (TM) has drawn increasing attention in recent years, however current understanding regarding degradation physics of solder alloys under time varying current loading is still quite limited. As most integrated circuit (IC) connectors carry Pulse Direct Current/AC signals under normal operating condition instead of DC, investigation of EM/TM failure under time varying current becomes essential. In this paper, detailed formulation is presented to characterize material damage due to electromigration and thermomigration. Entropy based damage model is adopted to characterize the material degradation physics. Thermal gradient is observed to reach 1000 K/cm in current crowding regions, which is high enough to induce TM damage. Most of the time solder joint failure is due to combined action of EM and TM effects, therefore failure under pulsed current loadings due to combined action is investigated. Vacancy accumulation during current on pe...