Computational and analytical comparison of flux discretizations for the semiconductor device equations beyond Boltzmann statistics

@article{Farrell2017ComputationalAA,
  title={Computational and analytical comparison of flux discretizations for the semiconductor device equations beyond Boltzmann statistics},
  author={Patricio Farrell and Thomas Koprucki and J{\"u}rgen Fuhrmann},
  journal={J. Comput. Physics},
  year={2017},
  volume={346},
  pages={497-513}
}
For a Voronoï finite volume discretization of the van Roosbroeck system with general charge carrier statistics we compare three thermodynamically consistent numerical fluxes known in the literature. We discuss an extension of the Scharfetter-Gummel scheme to non-Boltzmann (e.g. Fermi-Dirac) statistics. It is based on the analytical solution of a two-point… CONTINUE READING