• Corpus ID: 19014461

Computational Study of Interfaces between 2 D MoS 2 and Surroundings

@inproceedings{Kang2015ComputationalSO,
  title={Computational Study of Interfaces between 2 D MoS 2 and Surroundings},
  author={J. G. Kang and W. Liu and Kaustav Banerjee},
  year={2015}
}
The extracted mobilities from MoS2 devices are usually much lower than the theoretical value. Without understanding the origin of mobility killers (surrounding dipoles/traps) and the effects of substrate passivation treatments, it is difficult to improve transport properties. This work presents a study of the interfaces between MoS2 and its surroundings (substrates/dielectrics) using density functional theory (DFT). Introduction: Two-dimensional (2D) transition metal dichalcogenide material… 

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