• Corpus ID: 19014461

Computational Study of Interfaces between 2 D MoS 2 and Surroundings

  title={Computational Study of Interfaces between 2 D MoS 2 and Surroundings},
  author={J. G. Kang and W. Liu and Kaustav Banerjee},
The extracted mobilities from MoS2 devices are usually much lower than the theoretical value. Without understanding the origin of mobility killers (surrounding dipoles/traps) and the effects of substrate passivation treatments, it is difficult to improve transport properties. This work presents a study of the interfaces between MoS2 and its surroundings (substrates/dielectrics) using density functional theory (DFT). Introduction: Two-dimensional (2D) transition metal dichalcogenide material… 

A Compact Current–Voltage Model for 2D Semiconductor Based Field-Effect Transistors Considering Interface Traps, Mobility Degradation, and Inefficient Doping Effect

This paper presents an analytical current-voltage model specifically formulated for 2-dimensional (2D) transition metal dichalcogenide (TMD) semiconductor based field-effect transistors (FETs). The

2D Semiconductor FETs—Projections and Design for Sub-10 nm VLSI

Two-dimensional (2D) crystal semiconductors, such as the well-known molybdenum disulfide (MoS2), are witnessing an explosion in research activities due to their apparent potential for various

2-D Layered Materials for Next-Generation Electronics: Opportunities and Challenges

Since the discovery of graphene in 2004, which proved the existence of 2-D crystals in nature, layered materials also known as van der Waals solids have received extensive reexamination, especially