Computational Electronics

  title={Computational Electronics},
  author={Dragica Vasileska and Stephen Marshall Goodnick},
  booktitle={Computational Electronics},
Computational Electronics is devoted to state of the art numerical techniques and physical models used in the simulation of semiconductor devices from a semi-classical perspective. Computational Electronics, as a part of the general Technology Computer Aided Design (TCAD) field, has become increasingly important as the cost of semiconductor manufacturing has grown exponentially, with a concurrent need to reduce the time from design to manufacture. The motivation for this volume is the need… 

Computational Electronics on GRID: A Mixed Mode Carrier Transport Model

The nano‐era of semiconductor electronics introduces the necessity of simulation methods which describe the electron transport in ultra‐small devices in a mixed mode where quantum‐coherent processes

Efficient simulation of the full Coulomb interaction in three dimensions

The continued scaling of MOSFETs into the nano-scale regime requires refined models for carrier transport due to, e.g., unintentional doping in the active channel region which gives rise to threshold

Finite-Element Simulation for Electrothermal Characterization of High-Power Diode Laser Bars

Abstract : Simulation of semiconductor diode laser performance involves interaction between multiple physics domains. This report presents the governing equations and finite-element (FE)

Steady-State Simulation of Semiconductor Devices Using Discontinuous Galerkin Methods

A discontinuous Galerkin (DG) method-based framework is developed to simulate steady-state response of semiconductor devices and its accuracy is demonstrated by comparing the results to those obtained by the finite volume and finite element methods implemented in a commercial software package.

15 Monte Carlo Device Simulations

As semiconductor devices are scaled into nanoscale regime, first velocity saturation starts to limit the carrier mobility due to pronounced intervalley scattering, and when the device dimensions are

Numerical modeling of MOS transistor with interconnections using lumped element-FDTD method

Numerical modeling of MOS transistor using implicit finite different-time domain method

A numerical modeling for a MOS transistor device based on a finite-difference approximation of drift-diffusion model (DDM), which contains the Poisson equation and the carrier transport equations is presented.

Modeling and Simulation of Single-Event Effects in Digital Devices and ICs

This paper reviews the status of research in modeling and simulation of single-event effects (SEE) in digital devices and integrated circuits, with a special emphasis on the current challenges

Numerical modeling of electrical/optical combination for the simulation of PIN photodiode

PIN photodiode has emerged as the most promising technology for optical device design. The analyze of their optical and electrical performances versus the technological parameters is so important. We

Quantum Transport and Phase-Field Modeling for Next-Generation Logic Devices

Author(s): Smith, Samuel Justin | Advisor(s): Salahuddin, Sayeef | Abstract: Modeling of semiconductor devices plays an important role in determining which future technologies are most promising for



Computer-aided two-dimensional analysis of bipolar transistors

A method for solving numerically the two-dimensional (2D) semiconductor steady-state transport equations is described. The principles of this method have been published earlier [1]. This paper

The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials

This review presents in a comprehensive and tutorial form the basic principles of the Monte Carlo method, as applied to the solution of transport problems in semiconductors. Sufficient details of a

An investigation of steady-state velocity overshoot in silicon

Rigorous thermodynamic treatment of heat generation and conduction in semiconductor device modeling

  • G. Wachutka
  • Physics
    IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
  • 1990
A treatment of the self-heating problem is presented, showing that, in the steady state, some of the heuristic models of heat generation, thermal conductivity, and heat capacity could indeed approximate the correct results within an error bound of 1-10%.

Monte Carlo Device Simulation: Full Band and Beyond

1. Numerical Aspects and Implementation of the DAMOCLES Monte Carlo Device Simulation Program.- 2. Scattering Mechanisms for Semiconductor Transport Calculations.- 3. Evaluating Photoexcitation

The influence of the thermal equilibrium approximation on the accuracy of classical two-dimensional numerical modeling of silicon submicrometer MOS transistors

Classical semiconductor equations are based on the thermal equilibrium approximation. Limitations introduced by this approximation for the 2-D numerical modeling of n-channel silicon submicrometer

Transport equations for electrons in two-valley semiconductors

Transport equations are derived for particles, momentum, and energy of electrons in a semiconductor with two distinct valleys in the conduction band, such as GaAs. Care is taken to state and discuss

Electron dynamics in short channel field-effect transistors

The dynamics of electrons between the source and drain of a microwave field-effect transistor (FET) have been studied using a Monte Carlo method. The spatial dependence as well as the time dependence