Compressively strained GaSb P-channel MOSFETs with high hole mobility


III-V compound semiconductors have stirred a significant interest over the recent years, due to their advantageous carrier transport properties [1,2]. Particularly, the high hole mobility makes GaSb very attractive for the p-channel MOSFET application [3]. Although many techniques have been developed to improve the performance of GaSb MOSFETs [4], effects… (More)


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