Comprehensive study of bias temperature instability on polycrystalline silicon thin-film transistors

@article{Huang2008ComprehensiveSO,
  title={Comprehensive study of bias temperature instability on polycrystalline silicon thin-film transistors},
  author={C.-F. Huang and Y. L. Chen and H.-C. Sun and C. W. Liu and Y.-C. Hsu and C.-C. Shih and K.-C. Lin and J. Chen},
  journal={2008 9th International Conference on Solid-State and Integrated-Circuit Technology},
  year={2008},
  pages={624-627}
}
The negative and positive bias temperature instabilities are investigated on p-channel and n-channel TFTs with four different combinations. The stress-induced hump in the subthreshold region is observed for PBTI on p-channel TFTs and NBTI on n-channel TFTs. The hump is attributed to the edge transistors along the channel width direction. Higher electric field at the corners induces more trapped carriers in the insulator as compared to channel transistor. In contrast, no humps are observed for… CONTINUE READING