Comprehensive physical model of dynamic resistive switching in an oxide memristor.

@article{Kim2014ComprehensivePM,
  title={Comprehensive physical model of dynamic resistive switching in an oxide memristor.},
  author={Sungho Kim and Shinhyun Choi and Wei D. Lu},
  journal={ACS nano},
  year={2014},
  volume={8 3},
  pages={2369-76}
}
Memristors have been proposed for a number of applications from nonvolatile memory to neuromorphic systems. Unlike conventional devices based solely on electron transport, memristors operate on the principle of resistive switching (RS) based on redistribution of ions. To date, a number of experimental and modeling studies have been reported to probe the RS mechanism; however, a complete physical picture that can quantitatively describe the dynamic RS behavior is still missing. Here, we present… CONTINUE READING
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Physical Electrothermal Model of Resistive Switching in Bi-layered Resistance-Change Memory

S. Kim, S.-J. Kim, +7 authors I.-K. Yoo
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Redox-based resistive switching memories.

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