Comprehensive modeling of NAND flash memory reliability: Endurance and data retention

@article{Xia2012ComprehensiveMO,
  title={Comprehensive modeling of NAND flash memory reliability: Endurance and data retention},
  author={Zhiliang Xia and Dae Sin Kim and Narae Jeong and Young-Gu Kim and Jae-ho Kim and Keun-Ho Lee and Young-Kwan Park and Chilhee Chung and Hwan Joo Lee and Jungin Han},
  journal={2012 IEEE International Reliability Physics Symposium (IRPS)},
  year={2012},
  pages={MY.5.1-MY.5.4}
}
A reliability modeling solution including endurance and data retention is developed for NAND Floating Gate Flash memory. Endurance model with trap generation considers the tunneling oxide quality distribution with process effect. Electric field and tunneling current effect also have been included. The complicated trap effect on threshold voltage and Swing shift is well explained based on non-uniformly trapped charge distribution. Thermal emission with Poole-Frenkel model and tunneling from trap… CONTINUE READING