Comprehensive evaluation of early retention (fast charge loss within a few seconds) characteristics in tube-type 3-D NAND flash memory

@article{Choi2016ComprehensiveEO,
  title={Comprehensive evaluation of early retention (fast charge loss within a few seconds) characteristics in tube-type 3-D NAND flash memory},
  author={Bongsik Choi and Sang Hyun Jang and Jinsu Yoon and JuHee Lee and Minsu Jeon and Yongwoo Lee and Jungmin Han and Jieun Lee and Dong Myong Kim and Chan Lim and Sungkye Park and Sung-Jin Choi},
  journal={2016 IEEE Symposium on VLSI Technology},
  year={2016},
  pages={1-2}
}
A fast charge loss within a few seconds, which is referred to as early retention, was observed in tube-type 2y word-line stacked 3-D NAND flash memory for the first time, and the origin of the early retention was comprehensively evaluated. Using a fast-response pulse I-V system, the early retention characteristics from microseconds to seconds were thoroughly investigated, and the correlations with various program and erase levels were examined using solid and checkerboard patterns. Our findings… CONTINUE READING

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