Comprehensive analytical approach to predicting freeze-out and exhaustion for uniform single-impurity semiconductors in equilibrium

@article{Pieper2005ComprehensiveAA,
  title={Comprehensive analytical approach to predicting freeze-out and exhaustion for uniform single-impurity semiconductors in equilibrium},
  author={Ronald J. Pieper and Sherif Michael},
  journal={IEEE Transactions on Education},
  year={2005},
  volume={48},
  pages={413-421}
}
In this paper, a complete analytical description for an exact expression for temperature dependence of the majority carrier in a single-impurity, nondegenerately doped equilibrium semiconductor is proposed. Analysis establishes that the problem is solvable exactly by identifying the only physically possible root to a cubic equation. This solution is complemented by an iterative technique that identifies boundaries for the intrinsic, freeze-out, and exhaustion regimes and facilitates selecting a… CONTINUE READING