Comprehensive Analysis of Short-Channel Effects in Ultrathin SOI MOSFETs

@article{Xie2013ComprehensiveAO,
  title={Comprehensive Analysis of Short-Channel Effects in Ultrathin SOI MOSFETs},
  author={Qian Xie and Chia-Jung Lee and Jun Xu and Clement Hsingjen Wann and Jack Y.-C Sun and Yuan Taur},
  journal={IEEE Transactions on Electron Devices},
  year={2013},
  volume={60},
  pages={1814-1819}
}
This paper analyzes the 2-D short-channel effect in ultrathin SOI MOSFETs. An empirical, channel length-dependent scale length is extracted from the lateral field slope of a series of numerically simulated devices. We show how this scale length is related to the short-channel threshold voltage roll-off and minimum channel length with and without a substrate bias. The benefit of a reverse substrate bias is investigated and understood in terms of the field and distribution of inversion charge in… CONTINUE READING

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References

Publications referenced by this paper.
SHOWING 1-9 OF 9 REFERENCES

Undoped-Body Extremely Thin SOI MOSFETs With Back Gates

  • IEEE Transactions on Electron Devices
  • 2009
VIEW 8 EXCERPTS
HIGHLY INFLUENTIAL

Review and Critique of Analytic Models of MOSFET Short-Channel Effects in Subthreshold

  • IEEE Transactions on Electron Devices
  • 2012
VIEW 4 EXCERPTS
HIGHLY INFLUENTIAL

Small-Geometry MOS Transistors: Physics and Modeling of Surface- and Buried-Channel Mosfets

T. N. Nguyen
  • Yuan Taur (F’98) received the Ph.D. degree from the University of California,
  • 1984
VIEW 1 EXCERPT

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