Comprehensive Analysis of Random Telegraph Noise Instability and Its Scaling in Deca–Nanometer Flash Memories

@article{Ghetti2009ComprehensiveAO,
  title={Comprehensive Analysis of Random Telegraph Noise Instability and Its Scaling in Deca–Nanometer Flash Memories},
  author={A. Ghetti and C. Monzio Compagnoni and A. S. Spinelli and Angelo Visconti},
  journal={IEEE Transactions on Electron Devices},
  year={2009},
  volume={56},
  pages={1746-1752}
}
This paper presents a comprehensive investigation of random telegraph noise (RTN) in deca-nanometer Flash memories, considering both the nor and the nand architecture. The statistical distribution of the threshold voltage instability is analyzed in detail, evidencing that the slope of its exponential tails is the critical parameter determining the scaling trend for RTN. By means of 3-D TCAD simulations, the slope is shown to be the result of cell geometry, atomistic substrate doping, and random… CONTINUE READING
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