Composition and Thickness of RF Sputtered Amorphous Silicon Alloy Films

Abstract

Because the composition and the thickness of the thin films are very important for the fabrication of the devices, in this study we have undertaken the determination of the composition and the thickness of the RF sputtered amorphous silicon alloy thin films deposited at room temperature under very different preparation conditions by using various techniques. Incorporation of argon is demonstrated in the room temperature deposited films and the thickness of the films measured by different methods such as Rutherford backscattering, spectroscopicellipsometry and step-profiler are found to be in reasonable agreement with each other.

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Cite this paper

@inproceedings{Lohner2008CompositionAT, title={Composition and Thickness of RF Sputtered Amorphous Silicon Alloy Films}, author={T. Lohner and M. Ser{\'e}nyi and D. K. Basa and N. Q. Khanh and {\'A}kos Nemcsics and P{\'e}ter Petrik and P{\'e}ter Turmezei}, year={2008} }