Composite TaSi2/n+poly-Si formation by rapid thermal annealing

Composite TaSi2/n+ poly-Si structures have been formed by rapid thermal annealing (RTA). Polysilicon films 0.2 µm thick were deposited on oxidized Si wafers by LPCVD and heavily doped with phosphorus by diffusion. A layer of TaSix0.22 µm thick was then cosputtered on polysilicon from separate targets. The as-deposited samples were annealed by RTA using high… (More)