Complementary metal oxide semiconductor-compatible silicon nanowire biofield-effect transistors as affinity biosensors.

Abstract

Affinity biosensors use biorecognition elements and transducers to convert a biochemical event into a recordable signal. They provides the molecule binding information, which includes the dynamics of biomolecular association and dissociation, and the equilibrium association constant. Complementary metal oxide semiconductor-compatible silicon (Si) nanowires configured as a field-effect transistor (NW FET) have shown significant advantages for real-time, label-free and highly sensitive detection of a wide range of biomolecules. Most research has focused on reducing the detection limit of Si-NW FETs but has provided less information about the real binding parameters of the biomolecular interactions. Recently, Si-NW FETs have been demonstrated as affinity biosensors to quantify biomolecular binding affinities and kinetics. They open new applications for NW FETs in the nanomedicine field and will bring such sensor technology a step closer to commercial point-of-care applications. This article summarizes the recent advances in bioaffinity measurement using Si-NW FETs, with an emphasis on the different approaches used to address the issues of sensor calibration, regeneration, binding kinetic measurements, limit of detection, sensor surface modification, biomolecule charge screening, reference electrode integration and nonspecific molecular binding.

DOI: 10.2217/nnm.13.156

Cite this paper

@article{Duan2013ComplementaryMO, title={Complementary metal oxide semiconductor-compatible silicon nanowire biofield-effect transistors as affinity biosensors.}, author={Xuexin Duan and Nitin K. Rajan and Mohammad Hadi Izadi and Mark A. Reed}, journal={Nanomedicine}, year={2013}, volume={8 11}, pages={1839-51} }