Complementary heterostructure insulated gate FET circuits for high-speed, low power VLSI

Abstract

Complementary AlGaAs/GaAs Heterostructure Insulated Gate Field Effect Transistor (C-HIGFET) test circuits have been fabricated using MBE and a self-aligned ion-implantation process. Ring oscillators have been demonstrated with a minimum gate propagation delay of 76psec. Minimum stand-by power as low as 23 µW has been achieved in complementary RAM cells… (More)

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Cite this paper

@article{Daniels1986ComplementaryHI, title={Complementary heterostructure insulated gate FET circuits for high-speed, low power VLSI}, author={R. Daniels and R. Mactaggart and J. Abrokwah and O N Tufte and M. S. Shur and Jongeun Baek and Phillip Jenkins}, journal={1986 International Electron Devices Meeting}, year={1986}, pages={448-451} }