Complementary Switching in Oxide-Based Bipolar Resistive-Switching Random Memory

@article{Nardi2013ComplementarySI,
  title={Complementary Switching in Oxide-Based Bipolar Resistive-Switching Random Memory},
  author={Federico Nardi and Simone Balatti and Stefano Larentis and D. C. Gilmer and Daniele Ielmini},
  journal={IEEE Transactions on Electron Devices},
  year={2013},
  volume={60},
  pages={70-77}
}
Resistive-switching random access memory (RRAM) devices utilizing a crossbar architecture represent a promising alternative for Flash replacement in high-density data storage applications. However, RRAM crossbar arrays require the adoption of diodelike select devices with high on-off -current ratio and with sufficient endurance. To avoid the use of select devices, one should develop passive arrays where the nonlinear characteristic of the RRAM device itself provides self-selection during read… CONTINUE READING
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