Complementary RF-LDMOS transistors realized with standard CMOS implantations

Complementary lateral-drain-extended MOS transistors (CLDMOS) were integrated in a 0.13 μm SiGe BiCMOS technology. The LDMOS devices were realized in the dual-gate-oxide CMOS process without additional process steps. Drift regions were formed by the lightly-doped drain (LDD) implantations of 3.3V NMOS and PMOS transistors of the baseline process. The NLDMOS… (More)