Competing dynamics of single phosphorus dopant in graphene with electron irradiation
@inproceedings{Su2018CompetingDO, title={Competing dynamics of single phosphorus dopant in graphene with electron irradiation}, author={Cong Su and Mukesh Tripathi and Qing-Bo Yan and Z. Wang and Zihan Zhang and L. Basile and G. Su and M. Dong and J. Kotakoski and J. Kong and J. Idrobo and T. Susi and J. Li}, year={2018} }
Atomic-level structural changes in materials are important but challenging to study. Here, we demonstrate the dynamics and the possibility of manipulating a phosphorus dopant atom in graphene using scanning transmission electron microscopy (STEM). The mechanisms of various processes are explored and compared with those of other dopant species by first-principles calculations. This work paves the way for designing a more precise and optimized protocol for atomic engineering.
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References
Physical Principles of Electron Microscopy: An Introduction to TEM, SEM, and AEM
- Materials Science
- 2005
- 665
- PDF