Compensation in Al-doped ZnO by Al-related acceptor complexes: synchrotron x-ray absorption spectroscopy and theory.

@article{TThienprasert2013CompensationIA,
  title={Compensation in Al-doped ZnO by Al-related acceptor complexes: synchrotron x-ray absorption spectroscopy and theory.},
  author={Jiraroj T-Thienprasert and Saroj Rujirawat and Wantana Klysubun and Joel Duenow and Timothy J. Coutts and S. B. Zhang and David C. Look and Sukit Limpijumnong},
  journal={Physical review letters},
  year={2013},
  volume={110 5},
  pages={055502}
}
The synchrotron x-ray absorption near edge structures (XANES) technique was used in conjunction with first-principles calculations to characterize Al-doped ZnO films. Standard characterizations revealed that the amount of carrier concentration and mobility depend on the growth conditions, i.e. H(2) (or O(2))/Ar gas ratio and Al concentration. First-principles calculations showed that Al energetically prefers to substitute on the Zn site, forming a donor Al(Zn), over being an interstitial (Al(i… CONTINUE READING