Compensation for transient chamber wall condition using real-time plasma density feedback control in an inductively coupled plasma etcher


Reactive ion etch processing is known to exhibit significant variability in final etch performance due to wall condition. Previous studies have shown that neutral species transients depend strongly upon chamber seasoning. In this article, we show simultaneous measurements of wall-state-induced changes in plasma density and poly-Si etch rate, and demonstrate… (More)

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