Comparison of the annealing behavior of thin Ta films deposited onto Si and SiO2 substrates.

Abstract

Structural changes at annealing temperatures (T(an)) of 500-1,100 degrees C were investigated for thin Ta films which were sputter-deposited onto pure Si substrates and onto thermally oxidized Si. In the as-deposited state, the Ta layers predominantly consist of metastable tetragonal beta-Ta, whereby the [001] texture is independent of the substrate… (More)

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Cite this paper

@article{Huebner2004ComparisonOT, title={Comparison of the annealing behavior of thin Ta films deposited onto Si and SiO2 substrates.}, author={Rene Huebner and Michael H. L. Hecker and Norbert Mattern and Volker Hoffmann and Klaus Wetzig and H Engelmann and Ehrenfried Zschech}, journal={Analytical and bioanalytical chemistry}, year={2004}, volume={379 4}, pages={568-75} }