Comparison of the Luminous Efficiencies of Ga- and N-Polar In x Ga 1 -x N /In y Ga 1 -y N Quantum Wells Grown by Plasma-Assisted Molecular Beam Epitaxy

@article{FernndezGarrido2015ComparisonOT,
  title={Comparison of the Luminous Efficiencies of Ga- and N-Polar In x Ga 1 -x N /In y Ga 1 -y N Quantum Wells Grown by Plasma-Assisted Molecular Beam Epitaxy},
  author={S. Fern{\'a}ndez-Garrido and J. Lahnemann and C. Hauswald and M. Korytov and M. Albrecht and C. Ch{\`e}ze and C. Skierbiszewski and O. Brandt},
  journal={Physical review applied},
  year={2015},
  volume={6},
  pages={034017}
}
  • S. Fernández-Garrido, J. Lahnemann, +5 authors O. Brandt
  • Published 2015
  • Materials Science, Physics
  • Physical review applied
  • We investigate the luminescence of Ga- and N-polar In$_{x}$Ga$_{1-x}$N/In$_{y}$Ga$_{1-y}$N quantum wells (QWs) grown by plasma-assisted molecular beam epitaxy on freestanding GaN as well as 6H-SiC substrates. In striking contrast to their Ga-polar counterparts, the N-polar QWs prepared on freestanding GaN do not exhibit any detectable photoluminescence. Theoretical simulations of the band profiles combined with resonant excitation of the QWs allow us to rule out carrier escape and subsequent… CONTINUE READING
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