Comparison of random telegraph noise, endurance and reliability in amorphous and crystalline hafnia-based ReRAM

Abstract

Resistive random access memory (ReRAM) is a novel form of non-volatile memory expected to replace FLASH memory in the near future. To optimize the switching parameters of ReRAM we investigated fab-friendly HfOx based devices with an either amorphous or crystalline active layers. Our devices are fabricated with a copper bottom electrode, a 50 nm sub… (More)

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