Comparison of epitaxial graphene on Si-face and C-face 4H SiC formed by ultrahigh vacuum and RF furnace production.

@article{Jernigan2009ComparisonOE,
  title={Comparison of epitaxial graphene on Si-face and C-face 4H SiC formed by ultrahigh vacuum and RF furnace production.},
  author={Glenn G. Jernigan and Brenda L. VanMil and Joseph L. Tedesco and Joseph G. Tischler and Evan R. Glaser and Anthony Davidson and Paul M. Campbell and D. Kurt Gaskill},
  journal={Nano letters},
  year={2009},
  volume={9 7},
  pages={
          2605-9
        }
}
We present X-ray photoelectron spectroscopy, van der Pauw Hall mobilities, low-temperature far-infrared magneto transmission (FIR-MT), and atomic force microscopy (AFM) results from graphene films produced by radiative heating in an ultrahigh vacuum (UHV) chamber or produced by radio frequency (RF) furnace annealing in a high vacuum chemical vapor deposition system on Si- and C-face 4H SiC substrates at 1200-1600 degrees C. Although the vacuum level and heating methods are different, graphene… CONTINUE READING
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