Comparison of Single and Two-Photon Absorption for Laser Characterization of Single-Event Upsets in SOI SRAMs

@article{Schwank2011ComparisonOS,
  title={Comparison of Single and Two-Photon Absorption for Laser Characterization of Single-Event Upsets in SOI SRAMs},
  author={J. R. Schwank and M. R. Shaneyfelt and P. E. D. Dodd and Dale Mcmorrow and J. H. Warner and Veronique Ferlet-Cavrois and P. M. Gouker and J. S. Melinger and J. A. Pellish and K. P. Rodbell and D. F. Heidel and P. W. Marshall and K A Label and S. E. Swanson},
  journal={IEEE Transactions on Nuclear Science},
  year={2011},
  volume={58},
  pages={2968-2975}
}
The laser pulse energy thresholds for single-event upset measured by single photon and two photon absorption are measured and compared for Sandia SRAMs and DPSRAMs, and IBM 45-nm SRAMs for devices with and without the back substrate removed. These results are also compared to heavy-ion results taken on the same devices. Sandia SRAM data taken on different test dates resulted in considerably different TPA laser pulse energy thresholds even though the TPA system was calibrated using standard… CONTINUE READING
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