Comparison of Nonlinear I-V Models for Submicron GaAs MESFET's Characteristics

A comparison of nine different nonlinear I-V models for the simulation of submicron GaAs MESFETs dc characteristics has been made. The drain-to-source current, Ids as a function of gate-to-source, Vgs and drain-to-source, Vds voltages has been simulated and then compared with experimental data to determine root-mean-square (RMS) errors. The lowest RMS error… CONTINUE READING