Comparison of Low Field Electron Transport Characteristics in InP , GaP , Ga 0 . 5 In 0 . 5 P and In As 0 . 8 P 0 . 2 by Solving Boltzmann Equation Using Iteration Model

Abstract

Temperature and doping dependencies of electron mobility in InP, GaP and Ga0.52In0.48P structures have been calculated using an iterative technique. The following scattering mechanisms, i.e, impurity, polar optical phonon, acoustic phonon and piezoelectric are included in the calculation. Ionized impurity scattering has been treated beyond the Born… (More)

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