Comparison of Direct Growth and Wafer Bonding for the Fabrication of GaInP/GaAs Dual-Junction Solar Cells on Silicon

@article{Dimroth2014ComparisonOD,
  title={Comparison of Direct Growth and Wafer Bonding for the Fabrication of GaInP/GaAs Dual-Junction Solar Cells on Silicon},
  author={Frank Dimroth and Tobias Roesener and Stephanie Essig and Christoph Weuffen and Alexander Wekkeli and Eduard Oliva and Gerald Siefer and Kerstin Volz and Thomas Hannappel and Dietrich Haussler and Wolfgang Jager and Andreas W. Bett},
  journal={IEEE Journal of Photovoltaics},
  year={2014},
  volume={4},
  pages={620-625}
}
Two different process technologies were investigated for the fabrication of high-efficiency GaInP/GaAs dual-junction solar cells on silicon: direct epitaxial growth and layer transfer combined with semiconductor wafer bonding. The intention of this research is to combine the advantages of high efficiencies in III-V tandem solar cells with the low cost of silicon. Direct epitaxial growth of a GaInP/GaAs dual-junction solar cell on a GaAsyP1-y buffer on silicon yielded a 1-sun efficiency of 16.4… CONTINUE READING
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