Comparison of Conventional 6 T SRAM cell and FinFET based 6 T SRAM Cell Parameters at 45 nm Technology

@inproceedings{Verma2015ComparisonOC,
  title={Comparison of Conventional 6 T SRAM cell and FinFET based 6 T SRAM Cell Parameters at 45 nm Technology},
  author={Deepali Verma and Shyam Babu and Shyam Akashe},
  year={2015}
}
When working for low power application the main estimation is to reduce leakage components and parameters. This stanza explores a vast link towards low leakage power SRAM cells using new technology and devices. The RAM contains bi-stable cross coupled latch which has V_th higher in write mode access MOSFET (Metal Oxide Semiconductor Field Effect Transistor… CONTINUE READING