Electrostatic Mechanisms Responsible for Device Degradation in AlGaN/AlN/GaN HEMTs
- Kalavagunta Aditya, Shen Likun, Schrimpf RonaldD, Reed Robert, Fleetwood Daniel M, Jain Raj K
- IEEE Trans Nucl Sci 2008;55:2106–12
Article history: Received 10 April 2013 Received in revised form 16 October 2013 Accepted 16 October 2013 Available online 21 November 2013 Mobility degradation due to scattering from radiation-induced defects is compared to that produced by self-heating in proton-irradiated AlGaN/GaN HEMTs using experiments and simulations. After irradiation, the mobility in the 2DEG is limited by scattering from charged traps and is temperature-limited near the gate–drain access region. 2013 Elsevier Ltd. All rights reserved.