Comparison between trap and self-heating induced mobility degradation in AlGaN/GaN HEMTs

Abstract

Article history: Received 10 April 2013 Received in revised form 16 October 2013 Accepted 16 October 2013 Available online 21 November 2013 Mobility degradation due to scattering from radiation-induced defects is compared to that produced by self-heating in proton-irradiated AlGaN/GaN HEMTs using experiments and simulations. After irradiation, the mobility in the 2DEG is limited by scattering from charged traps and is temperature-limited near the gate–drain access region. 2013 Elsevier Ltd. All rights reserved.

DOI: 10.1016/j.microrel.2013.10.018

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Cite this paper

@article{Kalavagunta2014ComparisonBT, title={Comparison between trap and self-heating induced mobility degradation in AlGaN/GaN HEMTs}, author={Aditya Kalavagunta and Shubhajit Mukherjee and Robert A. Reed and Ronald D. Schrimpf}, journal={Microelectronics Reliability}, year={2014}, volume={54}, pages={570-574} }