Comparison between Electron Beam and Near-Field Light on the Luminescence Excitation of GaAs/AlGaAs Semiconductor Quantum Dots

@article{Mitsui2005ComparisonBE,
  title={Comparison between Electron Beam and Near-Field Light on the Luminescence Excitation of GaAs/AlGaAs Semiconductor Quantum Dots},
  author={Tadashi Mitsui and Takashi Sekiguchi and Daisuke Fujita and Nobuyuki Koguchi},
  journal={Japanese Journal of Applied Physics},
  year={2005},
  volume={44},
  pages={1820-1824}
}
To precisely estimate electron beam excitation intensity and to understand exactly the electron beam excitation process in a semiconductor, we observed and compared the luminescence properties of GaAs/Al0.3Ga0.7As self-assembled quantum dots (QDs) by the cathodoluminescence (CL) and near-field scanning optical microscopy (NSOM) techniques. The actual excitation densities measured by the CL and NSOM techniques are nearly equal at the dose rates considered, except for a low dose rate in which the… 
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