Comparison between Electron Beam and Near-Field Light on the Luminescence Excitation of GaAs/AlGaAs Semiconductor Quantum Dots

@article{Mitsui2005ComparisonBE,
  title={Comparison between Electron Beam and Near-Field Light on the Luminescence Excitation of GaAs/AlGaAs Semiconductor Quantum Dots},
  author={T. Mitsui and T. Sekiguchi and D. Fujita and N. Koguchi},
  journal={Japanese Journal of Applied Physics},
  year={2005},
  volume={44},
  pages={1820-1824}
}
To precisely estimate electron beam excitation intensity and to understand exactly the electron beam excitation process in a semiconductor, we observed and compared the luminescence properties of GaAs/Al0.3Ga0.7As self-assembled quantum dots (QDs) by the cathodoluminescence (CL) and near-field scanning optical microscopy (NSOM) techniques. The actual excitation densities measured by the CL and NSOM techniques are nearly equal at the dose rates considered, except for a low dose rate in which the… Expand
3 Citations

Figures from this paper

Quenching of the luminescence intensity of GaN nanowires under electron beam exposure: impact of C adsorption on the exciton lifetime.
TLDR
Time-resolved photoluminescence measurements on electron-irradiated samples reveal that the carbonaceous adlayer affects both the nonradiative and the radiative recombination dynamics. Expand
Spatial Inhomogeneity of Aluminum Content in Air-Bridged Lateral Epitaxially Grown AlGaN Ternary Alloy Films Probed by Cross-Sectional Scanning Near-Field Optical Microscopy
We systematically studied spatial inhomogeneity of aluminum content in air-bridged lateral epitaxially grown (ABLEG) AlGaN ternary alloy films by high-resolution photoluminescence mapping probed withExpand
Observation of optically inactive phonons for development of a unique near-field spectroscopy method
By combining dedicated near-field generation and detection techniques with Raman spectroscopy, optically inactive phonon activity is predicted. Observation of these phonons opens a new era as a novelExpand

References

SHOWING 1-10 OF 21 REFERENCES
Low Temperature Near-Field Photoluminescence Spectroscopy of InGaAs Single Quantum Dots.
We investigate InGaAs single-dot photoluminescence spectra and images using a low-temperature near-field optical microscope. By modifying the commonly used near-field technique, a high spatialExpand
Time-Resolved Emission from Self-Assembled Single Quantum Dots Using Scanning Near-Field Optical Microscope
We study time-resolved emission from self-assembled single InGaAs/GaAs quantum dots by the time-correlated single photon counting method using near-field optical microscopy. The decay time of theExpand
Bandgap Dependence and Related Features of Radiation Ionization Energies in Semiconductors
The problems dealt with concern the production of electron‐hole pairs in a semiconductor exposed to high‐energy radiation. The goal is to develop a simple phenomenological model capable of describingExpand
Dephasing Processes in Self-Organized Strained InGaAs Single-Dots on (311)B-GaAs Substrate
Single-dot photoluminescence measurements are undertaken on a number of individual InGaAs disks spontaneously formed on the GaAs-(311)B face. Well-isolated distinctive narrow single-dot luminescenceExpand
Near-field optical fiber probe optimized for illumination–collection hybrid mode operation
The structure of a near-field probe was optimized for illumination-collection hybrid mode (I–C mode) operation. We developed a highly sensitive probe with a sharp-edged aperture and a double-taperedExpand
QUANTITATIVE ELECTRON-BEAM TESTER FOR DEFECTS IN SEMICONDUCTORS (CL/EBIC/SDLTS SYSTEM)
A pulsed electron beam testing system was developed for quantitative analysis of optical and/or electrical properties of defects in semiconductors. This system can control not only the electron beamExpand
Imaging of boron dopant in highly oriented diamond films by cathodoluminescence in a transmission electron microscope
Boron‐doped, highly oriented, (100) textured diamond films have been examined by cathodoluminescence in a transmission electron microscope to assess the distribution of the defects and boron dopantExpand
Cathodoluminescence spectroscopy and imaging of individual GaN dots
Uncapped GaN dots on AlGaN barrier material, grown by metal organic chemical vapor deposition on 6H–SiC substrates, were studied. Cathodoluminescence (CL) microscopy and scanning electron microscopyExpand
A new apparatus for in situ photoluminescence spectroscopy in a transmission electron microscope
We have developed an in situ TEM/PL apparatus, which enables us to excite PL emissions from a microscopic area of a specimen inside a TEM. The microscopical area of 20 μm can be examined by TEM, PL,Expand
New selective molecular‐beam epitaxial growth method for direct formation of GaAs quantum dots
Numerous GaAs epitaxial microcrystals having an average base size of 700 A×700 A surrounded mainly by (111) and (110) facets were fabricated on a sulfer‐terminated (S‐terminated) GaAs (001) substrateExpand
...
1
2
3
...