Comparison between Device Simulators for Gate Current Calculation in Ultra-Thin Gate Oxide n-MOSFETs

@inproceedings{Cassan2000ComparisonBD,
  title={Comparison between Device Simulators for Gate Current Calculation in Ultra-Thin Gate Oxide n-MOSFETs},
  author={Eric Cassan and S. Galdin and Philippe Dollfus and P. Hesto},
  year={2000}
}
The gate oxide of sub-0.1μm MOSFETs channel length is expected to be reduced beyond 3 nm in spite of an increasing direct tunneling gate current. As tunnel injection modeling into SiO2 is expected to depend on the electron transport model adopted for the device description, a critical comparison is made in this paper between gate currents obtained from… CONTINUE READING