Comparing SiC MOSFET, IGBT and Si MOSFET in LV distribution inverters

@article{Roscoe2015ComparingSM,
  title={Comparing SiC MOSFET, IGBT and Si MOSFET in LV distribution inverters},
  author={Nina Roscoe and Yanni Zhong and S. J. Finney},
  journal={IECON 2015 - 41st Annual Conference of the IEEE Industrial Electronics Society},
  year={2015},
  pages={000743-000748}
}
Efficency, power quality and EMI are three crucial performance drivers in LVDC applications such as electrical supply, EV charging or DC aerospace. Recent developments in SiC MOSFETs and MMC for LVDC promise two significant improvements in LVDC inverter performance. However, the designer is left with many combinations of technology and inverter level to choose from. This paper aims to clarify this choice by identifying one optimum Si design and one optimum SiC design, using detailed loss… CONTINUE READING