Comparative study between Si (110) and (100) substrates on mobility and velocity enhancements for short-channel highly-strained PFETs


Mobility and velocity enhancements of hole on Si (110) and (100) substrates are accurately investigated for short-channel highly-strained pFETs. Local channel stress in short gate length is successfully observed for damascene gate pFETs with stressors by UV-Raman spectroscopy. A high channel stress of -2.4 GPa is measured for a 30-nm gate length device… (More)


2 Figures and Tables