Comparative analysis of partial buried oxide germanium-on-insulator p-channel MOSFETs

@article{Patil2016ComparativeAO,
  title={Comparative analysis of partial buried oxide germanium-on-insulator p-channel MOSFETs},
  author={Ganesh C. Patil},
  journal={2016 3rd International Conference on Emerging Electronics (ICEE)},
  year={2016},
  pages={1-3}
}
  • Ganesh C. Patil
  • Published 2016 in
    2016 3rd International Conference on Emerging…
In this paper comparative analysis of germanium-on-insulator (GeOI) p-channel MOSFET (PMOS), partial buried oxide (Pi-OX), Pi-OX with n<sup>+</sup> partial ground plane (PGP), and Pi-OX with δ-doping PMOS devices has been carried out. It has been found that, employing Pi-OX with δ-doping in Ge PMOS not only reduces the self-heating effect but also reduces… CONTINUE READING