Comparative Study on Program/Erase E ciency and Retention Properties of 3-D SONOS Flash Memory Cell Array Transistors: Structural Approach from Double-Gate FET and FinFET to Gate-All-Around FET

Abstract

Comparative Study on Program/Erase E ciency and Retention Properties of 3-D SONOS Flash Memory Cell Array Transistors: Structural Approach from Double-Gate FET and FinFET to Gate-All-Around FET So Ra Park, Kwan Young Kim, Changmin Choi, Kwan-Jae Song, Jun-Hyun Park, Kichan Jeon, Sunyeong Lee, Tae Yoon Kim, Ji Eun Lee, Sangwon Lee, Sungwook Park, Jaeman Jang… (More)

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