Comparative Study of the Molecular Beam Epitaxial Growth of InAs / GaSb Superlattices on GaAs and GaSb Substrates

@inproceedings{Benyahia2017ComparativeSO,
  title={Comparative Study of the Molecular Beam Epitaxial Growth of InAs / GaSb Superlattices on GaAs and GaSb Substrates},
  author={Djalal Benyahia and Ł. Kubiszyn and Krystian Michalczewski and A. Kębłowski and Piotr Martyniuk and J{\'o}zef Piotrowski and Antoni Rogalski},
  year={2017}
}
Short period type-II 10 ML InAs/10 ML GaSb superlattices epilayers (λcut−off = 5.4 μm) have been grown on near lattice matched GaSb (001) substrate and on lattice mismatched GaAs (001) substrate, by molecular beam epitaxy system. In the case of growing on GaAs substrate, GaSb buffer layer was grown in order to reduce the lattice mismatch of 7.5% between… CONTINUE READING