Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures

Abstract

Optical and photoelectric properties of metamorphic InAs/InGaAs and conventional pseudomorphic InAs/GaAs quantum dot (QD) structures were studied. We used two different electrical contact configurations that allowed us to have the current flow (i) only through QDs and embedding layers and (ii) through all the structure, including the GaAs substrate (wafer… (More)
DOI: 10.1186/s11671-017-2091-z

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@inproceedings{Golovynskyi2017ComparativeSO, title={Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures}, author={Sergii Golovynskyi and L. Seravalli and Oleksandr Datsenko and G. Trevisi and Paola Frigeri and E. Gombia and Iuliia Golovynska and Serhiy V. Kondratenko and Junle Qu and Tymish Y Ohulchanskyy}, booktitle={Nanoscale research letters}, year={2017} }