Comparative Study of Double Gate Soi Mosfet and Single Gate Soi Mosfet through Simulation

Abstract

In this paper, 25 nm Single Gate Silicon on Insulator (SG-SOI) MOSFET is compared with Double Gate Silicon on Insulator (DG-SOI) MOSFET. The DG-SOI structure is similar to the proposed SOI with the exception of back gate at body. The resulted modified DG-SOI-MOSFET reduces the short channel effects (SCEs). The transfer characteristics DIBL, threshold… (More)

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