Compact lumped element model for TSV in 3D-ICs

Abstract

A wide-band lumped element model for a through silicon via (TSV) is proposed based on electromagnetic simulations. Closed form expressions for the TSV parasitics based on the dimensional analysis method are introduced. The proposed model enables direct extraction of the TSV resistance, self-inductance, oxide capacitance, and parasitic elements due to the… (More)
DOI: 10.1109/ISCAS.2011.5938067

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