Compact Virtual-Source Current–Voltage Model for Top- and Back-Gated Graphene Field-Effect Transistors

@article{Wang2011CompactVC,
  title={Compact Virtual-Source Current–Voltage Model for Top- and Back-Gated Graphene Field-Effect Transistors},
  author={Han Wang and A. Hsu and J. Kong and D. Antoniadis and T. Palacios},
  journal={IEEE Transactions on Electron Devices},
  year={2011},
  volume={58},
  pages={1523-1533}
}
This paper presents a compact model for the current-voltage characteristics of graphene field-effect transistors (GFETs), which is based on an extension of the “virtual-source” model previously proposed for Si MOSFETs and is valid for both saturation and nonsaturation regions of device operation. This GFET virtual-source model provides a simple and intuitive understanding of carrier transport in GFETs, allowing extraction of the virtual-source injection velocity vVS, which is a physical… Expand

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